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Crucial Technology CT51264BD1339.M16F 4GB
Shenzhen Technology Co Ltd 8GB
比较
Crucial Technology CT51264BD1339.M16F 4GB vs Shenzhen Technology Co Ltd 8GB
总分
Crucial Technology CT51264BD1339.M16F 4GB
总分
Shenzhen Technology Co Ltd 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB
报告一个错误
低于PassMark测试中的延时,ns
25
32
左右 22% 更低的延时
需要考虑的原因
Shenzhen Technology Co Ltd 8GB
报告一个错误
更快的读取速度,GB/s
15.9
12.1
测试中的平均数值
更快的写入速度,GB/s
11.9
8.6
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BD1339.M16F 4GB
Shenzhen Technology Co Ltd 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
32
读取速度,GB/s
12.1
15.9
写入速度,GB/s
8.6
11.9
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2045
2831
Crucial Technology CT51264BD1339.M16F 4GB RAM的比较
Swissbit SLN04G64E1BQ2SA-DC 4GB
Kingston 9905471-030.A00LF 8GB
Shenzhen Technology Co Ltd 8GB RAM的比较
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT51264BD1339.M16F 4GB
Shenzhen Technology Co Ltd 8GB
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Samsung M393B5170FH0-CK0 4GB
Corsair CMWB8G1L3200K16W4 8GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology BLS4G4D240FSB.8FBD 4GB
报告一个错误
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