Crucial Technology CT51264BD1339.M16F 4GB vs Shenzhen Xingmem Technology Corp 16GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

Shenzhen Xingmem Technology Corp 16GB

Shenzhen Xingmem Technology Corp 16GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 43

左右 42% 更低的延时
更快的写入速度，GB/s

8.6 7.8

测试中的平均数值

Shenzhen Xingmem Technology Corp 16GB

需要考虑的原因
Shenzhen Xingmem Technology Corp 16GB

报告一个错误

更快的读取速度，GB/s

14.3 12.1

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

Shenzhen Xingmem Technology Corp 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 43
读取速度，GB/s

12.1 14.3
写入速度，GB/s

8.6 7.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2045 2128

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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Apacer Technology 78.CAGP7.AZ20B 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Ramaxel Technology RMSA3260KC78HAF-2666 8GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Micron Technology AFLD48EH1P 8GB

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Kingston 9905403-011.A03LF 2GB

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Samsung M378B5173BH0-CH9 4GB

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Corsair CM4B8G2J2133A15S 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Corsair CMD16GX4M4A2800C16 4GB

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Kingston KHX2133C11D3/4GX 4GB

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Crucial Technology CT8G4DFS632A.M4FB 8GB

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SK Hynix HMT41GU7BFR8A-PB 8GB

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Essencore Limited KD48GU880-32A160T 8GB

Essencore Limited KD48GU880-32A160T 8GB