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Crucial Technology CT51264BD1339.M16F 4GB
SK Hynix HMA41GU6MFR8N-TF 8GB

Crucial Technology CT51264BD1339.M16F 4GB vs SK Hynix HMA41GU6MFR8N-TF 8GB

总分
star star star star star
Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分
star star star star star
SK Hynix HMA41GU6MFR8N-TF 8GB

SK Hynix HMA41GU6MFR8N-TF 8GB

差异 规格 评论

差异

Crucial Technology CT51264BD1339.M16F 4GB 需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 37
    左右 32% 更低的延时
SK Hynix HMA41GU6MFR8N-TF 8GB 需要考虑的原因
SK Hynix HMA41GU6MFR8N-TF 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14.6 left arrow 12.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.8 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BD1339.M16F 4GB
SK Hynix HMA41GU6MFR8N-TF 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 37
  • 读取速度，GB/s
    12.1 left arrow 14.6
  • 写入速度，GB/s
    8.6 left arrow 11.8
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2045 left arrow 2780

Crucial Technology CT51264BD1339.M16F 4GB RAM的比较

Swissbit SLN04G64E1BQ2SA-DC 4GB
Kingston 9905471-030.A00LF 8GB

SK Hynix HMA41GU6MFR8N-TF 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Samsung M378A1G43DB0-CPB 8GB
SK Hynix HMA851U6CJR6N-UH 4GB
SK Hynix HMA851U6CJR6N-UH 4GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Apacer Technology 78.D2GG7.AU30B 16GB
Apacer Technology 78.D2GG7.AU30B 16GB
内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
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内存RAM
Samsung M393B1K70QB0-CK0 8GB
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Patriot Memory (PDP Systems) PSD44G213382 4GB
Patriot Memory (PDP Systems) PSD44G213382 4GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
SK Hynix HMA41GU6MFR8N-TF 8GB
SK Hynix HMA41GU6MFR8N-TF 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
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内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C
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Corsair CMZ8GX3M2A1600C9 4GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
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G Skill Intl F4-4000C17-16GVKB 16GB
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AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
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Kingston KKRVFX-MIE 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Kingston HP26D4U6S8ME-8X 8GB
Kingston HP26D4U6S8ME-8X 8GB
内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
G Skill Intl F4-3466C16-4GTZ 4GB
G Skill Intl F4-3466C16-4GTZ 4GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Smart Modular SF4641G8CK8IWGKSEG 8GB
Smart Modular SF4641G8CK8IWGKSEG 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CM4X8GD3000C16K4D 8GB
Corsair CM4X8GD3000C16K4D 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-2133C15-16GIS 16GB
G Skill Intl F4-2133C15-16GIS 16GB
内存RAM