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Crucial Technology BLT2G3D1608DT1TX0 2GB
G Skill Intl F4-2666C19-16GIS 16GB

Crucial Technology BLT2G3D1608DT1TX0 2GB vs G Skill Intl F4-2666C19-16GIS 16GB

总分
star star star star star
Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

总分
star star star star star
G Skill Intl F4-2666C19-16GIS 16GB

G Skill Intl F4-2666C19-16GIS 16GB

差异 规格 评论

差异

Crucial Technology BLT2G3D1608DT1TX0 2GB 需要考虑的原因
Crucial Technology BLT2G3D1608DT1TX0 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 34
    左右 32% 更低的延时
G Skill Intl F4-2666C19-16GIS 16GB 需要考虑的原因
G Skill Intl F4-2666C19-16GIS 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16.5 left arrow 13.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.8 left arrow 9.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Crucial Technology BLT2G3D1608DT1TX0 2GB
G Skill Intl F4-2666C19-16GIS 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    23 left arrow 34
  • 读取速度，GB/s
    13.6 left arrow 16.5
  • 写入速度，GB/s
    9.4 left arrow 12.8
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2096 left arrow 3193

Crucial Technology BLT2G3D1608DT1TX0 2GB RAM的比较

Crucial Technology BLT2G3D1608DT1TX0. 2GB
Crucial Technology CT8G4SFRA32A.M8FR 8GB

G Skill Intl F4-2666C19-16GIS 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Kingston 9905598-026.A00G 16GB
Kingston 9905598-026.A00G 16GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston 99U5701-003.A00G 16GB
Kingston 99U5701-003.A00G 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Mushkin 99[2/7/4]208F 8GB
Mushkin 99[2/7/4]208F 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Corsair CM4B8G2J2666A15D 8GB
Corsair CM4B8G2J2666A15D 8GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-3000C14-16GTZ 16GB
G Skill Intl F4-3000C14-16GTZ 16GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-3000C16-8GVSB 8GB
G Skill Intl F4-3000C16-8GVSB 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Patriot Memory (PDP Systems) PSD44G213382 4GB
Patriot Memory (PDP Systems) PSD44G213382 4GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Kingston 99U5713-003.A00G 4GB
Kingston 99U5713-003.A00G 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Kingston 9965690-002.A00G 8GB
Kingston 9965690-002.A00G 8GB
内存RAM
Kingston 9965516-430.A00G 16GB
Kingston 9965516-430.A00G 16GB
Micron Technology 16ATF4G64AZ-3G2E1 32GB
Micron Technology 16ATF4G64AZ-3G2E1 32GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Mushkin 99[2/7/4]200F 8GB
Mushkin 99[2/7/4]200F 8GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Corsair CMK32GX4M4K4333C19 8GB
Corsair CMK32GX4M4K4333C19 8GB
内存RAM