Crucial Technology CT51264BD1339.M16F 4GB vs SK Hynix HMA851S6CJR6N-XN 4GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

SK Hynix HMA851S6CJR6N-XN 4GB

SK Hynix HMA851S6CJR6N-XN 4GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 38

左右 34% 更低的延时

SK Hynix HMA851S6CJR6N-XN 4GB

需要考虑的原因
SK Hynix HMA851S6CJR6N-XN 4GB

报告一个错误

更快的读取速度，GB/s

15.1 12.1

测试中的平均数值
更快的写入速度，GB/s

11.6 8.6

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

SK Hynix HMA851S6CJR6N-XN 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 38
读取速度，GB/s

12.1 15.1
写入速度，GB/s

8.6 11.6
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2045 2382

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Maxsun MSD48G26Q3 8GB

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Crucial Technology CT51264BD1339.M16F 4GB

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SK Hynix GKE800UD102408-2133 8GB

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Kingston 9905678-139.A00G 8GB

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A-DATA Technology DQVE1908 512MB

Lexar Co Limited LD4AS016G-H3200GST 16GB

Lexar Co Limited LD4AS016G-H3200GST 16GB

Samsung M393B5170EH1-CH9 4GB

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Team Group Inc. TEAMGROUP-UD4-2933 8GB

Team Group Inc. TEAMGROUP-UD4-2933 8GB

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Patriot Memory (PDP Systems) 3600 C20 Series 8GB

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