Crucial Technology CT51264BD1339.M16F 4GB vs SK Hynix HMA851U6CJR6N-UH 4GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

SK Hynix HMA851U6CJR6N-UH 4GB

SK Hynix HMA851U6CJR6N-UH 4GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 37

左右 32% 更低的延时

SK Hynix HMA851U6CJR6N-UH 4GB

需要考虑的原因
SK Hynix HMA851U6CJR6N-UH 4GB

报告一个错误

更快的读取速度，GB/s

15.6 12.1

测试中的平均数值
更快的写入速度，GB/s

12.0 8.6

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

SK Hynix HMA851U6CJR6N-UH 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 37
读取速度，GB/s

12.1 15.6
写入速度，GB/s

8.6 12.0
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2045 2314

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-4000C14-16GTZR 16GB

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G Skill Intl F4-2133C15-8GNS 8GB

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SpecTek Incorporated ?????????????????? 2GB

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Samsung M471A1K43EB1-CWE 8GB

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Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

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Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

Crucial Technology CT51264BA1339.C16F 4GB

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Essencore Limited KD4AGU880-32A160X 16GB

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Kingston 9905624-010.A00G 4GB

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Corsair CMD16GX4M4A2666C15 4GB

Corsair CMD16GX4M4A2666C15 4GB