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Crucial Technology CT51264BD160B.C16F 4GB
Avant Technology J641GU42J5213ND 8GB
比较
Crucial Technology CT51264BD160B.C16F 4GB vs Avant Technology J641GU42J5213ND 8GB
总分
Crucial Technology CT51264BD160B.C16F 4GB
总分
Avant Technology J641GU42J5213ND 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB
报告一个错误
低于PassMark测试中的延时,ns
41
43
左右 5% 更低的延时
更快的读取速度,GB/s
13.9
11.3
测试中的平均数值
更快的写入速度,GB/s
9.7
9.2
测试中的平均数值
需要考虑的原因
Avant Technology J641GU42J5213ND 8GB
报告一个错误
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BD160B.C16F 4GB
Avant Technology J641GU42J5213ND 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
41
43
读取速度,GB/s
13.9
11.3
写入速度,GB/s
9.7
9.2
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2366
2098
Crucial Technology CT51264BD160B.C16F 4GB RAM的比较
Corsair CMZ8GXMA1600C9 512MB
Samsung M393A4K40BB1-CRC 32GB
Avant Technology J641GU42J5213ND 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Crucial Technology CT51264BD160B.C16F 4GB
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Crucial Technology BLT2G3D1608DT1TX0 2GB
Kingston 9905598-028.A00G 8GB
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Samsung M378A1K43CB2-CTD 8GB
Crucial Technology CT25664AA800.M16FG 2GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
报告一个错误
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