Crucial Technology CT51264BD160B.C16F 4GB vs Corsair CMK16GX4M1Z3600C18 16GB

总分

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分

Corsair CMK16GX4M1Z3600C18 16GB

Corsair CMK16GX4M1Z3600C18 16GB

差异规格评论

差异

Crucial Technology CT51264BD160B.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB

报告一个错误

Corsair CMK16GX4M1Z3600C18 16GB

需要考虑的原因
Corsair CMK16GX4M1Z3600C18 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 41

左右 -28% 更低的延时
更快的读取速度，GB/s

18.5 13.9

测试中的平均数值
更快的写入速度，GB/s

13.4 9.7

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD160B.C16F 4GB

Corsair CMK16GX4M1Z3600C18 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 32
读取速度，GB/s

13.9 18.5
写入速度，GB/s

9.7 13.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2366 3356

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Corsair CMZ16GX3M2A1866C9 8GB

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Micron Technology 18HTF12872AY-800F1 1GB

Kingston ACR32D4S2S8ME-16 16GB

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G Skill Intl F4-2800C16-8GRR 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

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Kingston HX432C15PB3/16 16GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Apacer Technology 78.B1GQB.4010B 4GB

Apacer Technology 78.B1GQB.4010B 4GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Crucial Technology CT8G4DFD824A.C16FBR2 8GB

Crucial Technology CT8G4DFD824A.C16FBR2 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Crucial Technology CT16G4SFRA32A.C8FB 16GB

Crucial Technology CT16G4SFRA32A.C8FB 16GB

Micron Technology 8ATF51264AZ-2G1B1 4GB

Micron Technology 8ATF51264AZ-2G1B1 4GB

Corsair CMK64GX4M4B3000C15 16GB

Corsair CMK64GX4M4B3000C15 16GB