Crucial Technology CT51264BD160B.C16F 4GB vs Corsair CMN32GX4M2Z4600C18 16GB

总分

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分

Corsair CMN32GX4M2Z4600C18 16GB

Corsair CMN32GX4M2Z4600C18 16GB

差异规格评论

差异

Crucial Technology CT51264BD160B.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB

报告一个错误

Corsair CMN32GX4M2Z4600C18 16GB

需要考虑的原因
Corsair CMN32GX4M2Z4600C18 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 41

左右 -64% 更低的延时
更快的读取速度，GB/s

17.4 13.9

测试中的平均数值
更快的写入速度，GB/s

16.6 9.7

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD160B.C16F 4GB

Corsair CMN32GX4M2Z4600C18 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 25
读取速度，GB/s

13.9 17.4
写入速度，GB/s

9.7 16.6
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2366 3908

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9905471-076.A00LF 8GB

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Samsung M474A4G43MB1-CTD 32GB

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King Tiger Technology Tigo-X3-3200MHz-8G 8GB

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TwinMOS 9DNPBNZB-TATP 4GB

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Corsair CMD16GX4M2B2800C14 8GB

Corsair CMD16GX4M2B2800C14 8GB

Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

G Skill Intl F4-2400C15-4GRR 4GB

G Skill Intl F4-2400C15-4GRR 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Roa Logic BV iGame DDR4 8G 3000 8GB

Roa Logic BV iGame DDR4 8G 3000 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Roa Logic BV W4U2666CX1-8G 8GB

Roa Logic BV W4U2666CX1-8G 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

Kingston KHX3000C15/16GX 16GB

Kingston KHX3000C15/16GX 16GB