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Crucial Technology CT51264BD160B.C16F 4GB
G Skill Intl F4-2400C15-8GFXR 8GB

Crucial Technology CT51264BD160B.C16F 4GB vs G Skill Intl F4-2400C15-8GFXR 8GB

总分
star star star star star
Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分
star star star star star
G Skill Intl F4-2400C15-8GFXR 8GB

G Skill Intl F4-2400C15-8GFXR 8GB

差异 规格 评论

差异

Crucial Technology CT51264BD160B.C16F 4GB 需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB
报告一个错误
G Skill Intl F4-2400C15-8GFXR 8GB 需要考虑的原因
G Skill Intl F4-2400C15-8GFXR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 41
    左右 -52% 更低的延时
  • 更快的读取速度，GB/s
    17.8 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.2 left arrow 9.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BD160B.C16F 4GB
G Skill Intl F4-2400C15-8GFXR 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 27
  • 读取速度，GB/s
    13.9 left arrow 17.8
  • 写入速度，GB/s
    9.7 left arrow 13.2
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 11 13 14 15
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2366 left arrow 3337

Crucial Technology CT51264BD160B.C16F 4GB RAM的比较

Corsair CMZ8GXMA1600C9 512MB
Samsung M393A4K40BB1-CRC 32GB

G Skill Intl F4-2400C15-8GFXR 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
G Skill Intl F4-2400C15-8GFXR 8GB
G Skill Intl F4-2400C15-8GFXR 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
G Skill Intl F4-2666C18-32GRS 32GB
G Skill Intl F4-2666C18-32GRS 32GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston KHX21334D4/8G 8GB
Kingston KHX21334D4/8G 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Essencore Limited IM48GU48N24-FFFHM 8GB
Essencore Limited IM48GU48N24-FFFHM 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Samsung M378A1K43EB2-CVF 8GB
Samsung M378A1K43EB2-CVF 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Corsair CMK32GX4M2Z3600C18 16GB
Corsair CMK32GX4M2Z3600C18 16GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
G Skill Intl F4-3600C14-8GTZRA 8GB
G Skill Intl F4-3600C14-8GTZRA 8GB
内存RAM
Corsair CMK64GX5M2B5200C40 32GB
Corsair CMK64GX5M2B5200C40 32GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Apacer Technology 78.CAGSZ.4070B 8GB
Apacer Technology 78.CAGSZ.4070B 8GB
内存RAM
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Essencore Limited KD48GU88C-26N190A 8GB
Essencore Limited KD48GU88C-26N190A 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
SK Hynix HMA82GS6DJR8N-VK 16GB
SK Hynix HMA82GS6DJR8N-VK 16GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-3200C14-8GVK 8GB
G Skill Intl F4-3200C14-8GVK 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BL8G32C16U4WL.8FE 8GB
Crucial Technology BL8G32C16U4WL.8FE 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
A-DATA Technology AM1P26KCST2-BABS 16GB
A-DATA Technology AM1P26KCST2-BABS 16GB
内存RAM