Crucial Technology CT51264BD160B.C16F 4GB vs G Skill Intl F4-3600C17-8GTRS 8GB

总分

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分

G Skill Intl F4-3600C17-8GTRS 8GB

G Skill Intl F4-3600C17-8GTRS 8GB

差异规格评论

差异

Crucial Technology CT51264BD160B.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB

报告一个错误

G Skill Intl F4-3600C17-8GTRS 8GB

需要考虑的原因
G Skill Intl F4-3600C17-8GTRS 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 41

左右 -86% 更低的延时
更快的读取速度，GB/s

16.9 13.9

测试中的平均数值
更快的写入速度，GB/s

14.4 9.7

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD160B.C16F 4GB

G Skill Intl F4-3600C17-8GTRS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 22
读取速度，GB/s

13.9 16.9
写入速度，GB/s

9.7 14.4
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2366 3166

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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SK Hynix HMA81GU6CJR8N-UH 8GB

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Crucial Technology CT51264BD160B.C16F 4GB

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G Skill Intl F4-3600C17-8GTRS 8GB

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Kingston K1N7HK-ELC 2GB

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Hyundai Inc AR36C18S8K2HU416R 8GB

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Kingston MSI21D4S15HAG/8G 8GB

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Crucial Technology BLE4G3D1608DE1TX0. 4GB

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G Skill Intl F4-3600C17-8GVK 8GB

G Skill Intl F4-3600C17-8GVK 8GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Crucial Technology BL32G32C16U4BL.M16FB 32GB

Crucial Technology BL32G32C16U4BL.M16FB 32GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Kingston 9905711-017.A00G 4GB

Kingston 9905711-017.A00G 4GB

Corsair CMX8GX3M2A2000C9 4GB

Corsair CMX8GX3M2A2000C9 4GB

Corsair CMW16GX4M2C3466C16 8GB

Corsair CMW16GX4M2C3466C16 8GB

Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

Micron Technology 8G2666CL19 8GB

Micron Technology 8G2666CL19 8GB