Samsung M471B5273DH0-CK0 4GB vs Samsung M471B5773CHS-CH9 2GB

总分

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

总分

Samsung M471B5773CHS-CH9 2GB

Samsung M471B5773CHS-CH9 2GB

差异规格评论

差异

Samsung M471B5273DH0-CK0 4GB

需要考虑的原因
Samsung M471B5273DH0-CK0 4GB

报告一个错误

更快的读取速度，GB/s

13.3 9.8

测试中的平均数值
更快的写入速度，GB/s

9.0 6.7

测试中的平均数值
更高的内存带宽，mbps

12800 10600

左右 1.21% 更高的带宽

Samsung M471B5773CHS-CH9 2GB

需要考虑的原因
Samsung M471B5773CHS-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

31 41

左右 -32% 更低的延时

规格

完整的技术规格清单

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5773CHS-CH9 2GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

41 31
读取速度，GB/s

13.3 9.8
写入速度，GB/s

9.0 6.7
内存带宽，mbps

12800 10600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
时序/时钟速度

9-9-9-24 / 1600 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2016 1304

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Micron Technology AFSD416ES1P 16GB

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Samsung M471B5273DH0-CK0 4GB

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Samsung DDR3 8GB 1600MHz 8GB

G Skill Intl F4-3200C22-16GRS 16GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Kingston ACR24D4S7S1MB-4 4GB

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Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Corsair CMW64GX4M8X3600C18 8GB

Corsair CMW64GX4M8X3600C18 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

SK Hynix HMA82GR7AFR8N-UH 16GB

SK Hynix HMA82GR7AFR8N-UH 16GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Corsair CMD64GX4M4B3466C16 16GB

Corsair CMD64GX4M4B3466C16 16GB

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB