Crucial Technology CT51264BD160B.C16F 4GB vs Kingston CBD24D4S7D8ME-16 16GB

总分

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分

Kingston CBD24D4S7D8ME-16 16GB

Kingston CBD24D4S7D8ME-16 16GB

差异规格评论

差异

Crucial Technology CT51264BD160B.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB

报告一个错误

更快的写入速度，GB/s

9.7 8.1

测试中的平均数值

Kingston CBD24D4S7D8ME-16 16GB

需要考虑的原因
Kingston CBD24D4S7D8ME-16 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 41

左右 -78% 更低的延时
更快的读取速度，GB/s

15.7 13.9

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD160B.C16F 4GB

Kingston CBD24D4S7D8ME-16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 23
读取速度，GB/s

13.9 15.7
写入速度，GB/s

9.7 8.1
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2366 2457

RAM Latency Calculator

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G Skill Intl F4-2400C16-8GFX 8GB

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Swissbit MEU25664D6BC2EP-30 2GB

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A-DATA Technology AO1P32NC8W1-BDZS 8GB

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Mushkin 996902 2GB

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Samsung M4 70T2953EZ3-CE6 1GB

InnoDisk Corporation M4S0-8GS1NCIK 8GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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Kingston 9905403-447.A00LF 4GB

V-GEN D4H16GS24A8 16GB

V-GEN D4H16GS24A8 16GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

Corsair CMU32GX4M4C3200C16 8GB

Corsair CMU32GX4M4C3200C16 8GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Ramaxel Technology RMSA3260MD78HAF-2666 8GB

Ramaxel Technology RMSA3260MD78HAF-2666 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Kingston MSI24D4S7S8MH-8 8GB

Kingston MSI24D4S7S8MH-8 8GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

SK Hynix HMA84GR7MFR4N-UH 32GB

SK Hynix HMA84GR7MFR4N-UH 32GB