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Crucial Technology CT51264BD160B.C16F 4GB
Kingston KYXC0V-MIB 16GB

Crucial Technology CT51264BD160B.C16F 4GB vs Kingston KYXC0V-MIB 16GB

总分
star star star star star
Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分
star star star star star
Kingston KYXC0V-MIB 16GB

Kingston KYXC0V-MIB 16GB

差异 规格 评论

差异

Crucial Technology CT51264BD160B.C16F 4GB 需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB
报告一个错误
Kingston KYXC0V-MIB 16GB 需要考虑的原因
Kingston KYXC0V-MIB 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 41
    左右 -21% 更低的延时
  • 更快的读取速度，GB/s
    14.8 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.9 left arrow 9.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BD160B.C16F 4GB
Kingston KYXC0V-MIB 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 34
  • 读取速度，GB/s
    13.9 left arrow 14.8
  • 写入速度，GB/s
    9.7 left arrow 9.9
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2366 left arrow 2739

Crucial Technology CT51264BD160B.C16F 4GB RAM的比较

Corsair CMZ8GXMA1600C9 512MB
Samsung M393A4K40BB1-CRC 32GB

Kingston KYXC0V-MIB 16GB RAM的比较

Crucial Technology CT8G4DFD8213.C16FHP 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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G Skill Intl F4-3200C16-16GTZSK 16GB
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内存RAM
Corsair CMX4GX3M1A1333C9 4GB
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SK Hynix HMAA4GS6CJR8N-XN 32GB
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Elpida EBJ17RG4EFWA-DJ-F 16GB
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G Skill Intl F4-3600C18-16GTZR 16GB
G Skill Intl F4-3600C18-16GTZR 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
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Mushkin MRX4U300GJJM16G 16GB
内存RAM
Elpida EBJ40UG8EFU0-GN-F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
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G Skill Intl F4-4000C19-16GTRS 16GB
内存RAM
Kingston 99U5471-056.A00LF 8GB
Kingston 99U5471-056.A00LF 8GB
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SK Hynix HMA451R7MFR8N-TF 4GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
G Skill Intl F4-2400C15-16GTZR 16GB
G Skill Intl F4-2400C15-16GTZR 16GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-3400C16-8GTZ 8GB
G Skill Intl F4-3400C16-8GTZ 8GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
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Corsair CM4X16GC3000C15K4 16GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Samsung 18ASF1G72PDZ-2G1B1 16GB
Samsung 18ASF1G72PDZ-2G1B1 16GB
内存RAM