Crucial Technology CT51264BD160B.C16F 4GB vs Micron Technology 16ATF2G64HZ-2G6J1 16GB

总分

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分

Micron Technology 16ATF2G64HZ-2G6J1 16GB

Micron Technology 16ATF2G64HZ-2G6J1 16GB

差异规格评论

差异

Crucial Technology CT51264BD160B.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB

报告一个错误

Micron Technology 16ATF2G64HZ-2G6J1 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-2G6J1 16GB

报告一个错误

低于PassMark测试中的延时，ns

38 41

左右 -8% 更低的延时
更快的读取速度，GB/s

15.2 13.9

测试中的平均数值
更快的写入速度，GB/s

11.4 9.7

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD160B.C16F 4GB

Micron Technology 16ATF2G64HZ-2G6J1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 38
读取速度，GB/s

13.9 15.2
写入速度，GB/s

9.7 11.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2366 2821

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Patriot Memory (PDP Systems) 2800 C18 Series 16GB

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Crucial Technology CT51264BD160B.C16F 4GB

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Micron Technology 16ATF2G64HZ-2G6J1 16GB

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G Skill Intl F3-1866C8-8GTX 8GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Micron Technology 16ATF2G64HZ-3G2E1 16GB

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Samsung M471A5244CB0-CWE 4GB

Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB

Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB

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Kingston 9905625-097.A00G 16GB

Kingston 9905625-097.A00G 16GB

A-DATA Technology DQKD1A08 1GB

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Ramaxel Technology RMSA3320ME88HBF-3200 16GB

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Kingston 99U5584-005.A00LF 4GB

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Mushkin MR[A/B]4U300JJJM16G 16GB

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Team Group Inc. Vulcan-1600 4GB

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Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB