Crucial Technology CT51264BD160B.C16F 4GB vs Micron Technology 18ASF2G72PDZ-2G3D1 16GB

总分

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分

Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Micron Technology 18ASF2G72PDZ-2G3D1 16GB

差异规格评论

差异

Crucial Technology CT51264BD160B.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB

报告一个错误

更快的读取速度，GB/s

13.9 8.7

测试中的平均数值
更快的写入速度，GB/s

9.7 6.2

测试中的平均数值

Micron Technology 18ASF2G72PDZ-2G3D1 16GB

需要考虑的原因
Micron Technology 18ASF2G72PDZ-2G3D1 16GB

报告一个错误

低于PassMark测试中的延时，ns

39 41

左右 -5% 更低的延时
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD160B.C16F 4GB

Micron Technology 18ASF2G72PDZ-2G3D1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 39
读取速度，GB/s

13.9 8.7
写入速度，GB/s

9.7 6.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2366 1842

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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SK Hynix HMT351S6CFR8C-PB 4GB

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Crucial Technology CT16G4DFRA266.C8FE 16GB

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Samsung M471B5173QH0-YK0 4GB

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Samsung M378B5673FH0-CH9 2GB

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Corsair CMN16GX4M2Z3200C16 8GB

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Kingston HX318C10FK/4 4GB

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Ramos Technology RMB4GB58BCA3-13HC 4GB

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Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology BL8G36C16U4BL.M8FE1 8GB

Crucial Technology BL8G36C16U4BL.M8FE1 8GB

A-DATA Technology DDR3 1333G 2GB

A-DATA Technology DDR3 1333G 2GB

G Skill Intl F4-3333C16-8GVR 8GB

G Skill Intl F4-3333C16-8GVR 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Corsair CMK16GX4M2K4266C19 8GB

Corsair CMK16GX4M2K4266C19 8GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

Corsair CMD32GX4M2C3200C16 16GB

Corsair CMD32GX4M2C3200C16 16GB