Crucial Technology CT51264BD160B.C16F 4GB vs SK Hynix HMA81GU6AFR8N-UH 8GB

总分

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分

SK Hynix HMA81GU6AFR8N-UH 8GB

SK Hynix HMA81GU6AFR8N-UH 8GB

差异规格评论

差异

Crucial Technology CT51264BD160B.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB

报告一个错误

SK Hynix HMA81GU6AFR8N-UH 8GB

需要考虑的原因
SK Hynix HMA81GU6AFR8N-UH 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 41

左右 -21% 更低的延时
更快的读取速度，GB/s

15.1 13.9

测试中的平均数值
更快的写入速度，GB/s

10.4 9.7

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD160B.C16F 4GB

SK Hynix HMA81GU6AFR8N-UH 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 34
读取速度，GB/s

13.9 15.1
写入速度，GB/s

9.7 10.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2366 2620

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

SK Hynix HMA81GU6AFR8N-UH 8GB

SK Hynix HMA81GU6AFR8N-UH 8GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Kingston 9905744-076.A00G 16GB

Kingston 9905744-076.A00G 16GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

G Skill Intl F4-2133C15-8GFX 8GB

G Skill Intl F4-2133C15-8GFX 8GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Kingston 9905678-065.A00G 8GB

Kingston 9905678-065.A00G 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

G Skill Intl F4-2666C15-4GRR 4GB

G Skill Intl F4-2666C15-4GRR 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

G Skill Intl F4-3200C16-16GVR 16GB

G Skill Intl F4-3200C16-16GVR 16GB

SK Hynix HMT42GR7AFR4C-RD 16GB

SK Hynix HMT42GR7AFR4C-RD 16GB

G Skill Intl F4-3466C16-8GTZKW 8GB

G Skill Intl F4-3466C16-8GTZKW 8GB

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

Kingston HP37D4U1S8ME-8X 8GB

Kingston HP37D4U1S8ME-8X 8GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

Transcend Information JM2666HLG-16GK 8GB

Transcend Information JM2666HLG-16GK 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston KHX426C13/8G 8GB

Kingston KHX426C13/8G 8GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Apacer Technology 78.BAGM6.40C0B 4GB

Apacer Technology 78.BAGM6.40C0B 4GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Avant Technology W641GU67J7240N8 8GB

Avant Technology W641GU67J7240N8 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Wilk Elektronik S.A. W-MEM2666S416G 16GB

Wilk Elektronik S.A. W-MEM2666S416G 16GB

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

Chun Well Technology Holding Limited MD4U1636181DCW 16GB

Chun Well Technology Holding Limited MD4U1636181DCW 16G