Crucial Technology CT51264BD160B.C16F 4GB vs Transcend Information JM2666HLB-16G 16GB

总分

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分

Transcend Information JM2666HLB-16G 16GB

Transcend Information JM2666HLB-16G 16GB

差异规格评论

差异

Crucial Technology CT51264BD160B.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB

报告一个错误

Transcend Information JM2666HLB-16G 16GB

需要考虑的原因
Transcend Information JM2666HLB-16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 41

左右 -17% 更低的延时
更快的读取速度，GB/s

16.2 13.9

测试中的平均数值
更快的写入速度，GB/s

11.6 9.7

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD160B.C16F 4GB

Transcend Information JM2666HLB-16G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 35
读取速度，GB/s

13.9 16.2
写入速度，GB/s

9.7 11.6
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2366 3120

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingmax Semiconductor GLAF62F-D8---------- 4GB

Kingmax Semiconductor GLAF62F-D8---------- 4GB

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Samsung M378B5673FH0-CH9 2GB

Kingmax Semiconductor GLLG42F-DA---------- 8GB

Kingmax Semiconductor GLLG42F-DA---------- 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

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