Crucial Technology CT51264BF160BJ.M8F 4GB vs Kingston 9905624-004.A00G 4GB

总分

Crucial Technology CT51264BF160BJ.M8F 4GB

Crucial Technology CT51264BF160BJ.M8F 4GB

总分

Kingston 9905624-004.A00G 4GB

Kingston 9905624-004.A00G 4GB

差异规格评论

差异

Crucial Technology CT51264BF160BJ.M8F 4GB

需要考虑的原因
Crucial Technology CT51264BF160BJ.M8F 4GB

报告一个错误

Kingston 9905624-004.A00G 4GB

需要考虑的原因
Kingston 9905624-004.A00G 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 29

左右 -26% 更低的延时
更快的读取速度，GB/s

16.3 11.5

测试中的平均数值
更快的写入速度，GB/s

12.0 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BF160BJ.M8F 4GB

Kingston 9905624-004.A00G 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 23
读取速度，GB/s

11.5 16.3
写入速度，GB/s

7.3 12.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1892 2512

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

Corsair CMK16GX4M2B3333C16 8GB

Corsair CMK16GX4M2B3333C16 8GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

Kingston 99U5428-018.A00LF 8GB

Kingston 99U5428-018.A00LF 8GB

SK Hynix HMA851U6JJR6N-VK 4GB

SK Hynix HMA851U6JJR6N-VK 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

InnoDisk Corporation M4S0-4GSSNCIK 4GB

InnoDisk Corporation M4S0-4GSSNCIK 4GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Smart Modular SF4641G8CK8IEGKSBG 8GB

Smart Modular SF4641G8CK8IEGKSBG 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Golden Empire CL16-18-18 D4-3400 4GB

Golden Empire CL16-18-18 D4-3400 4GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Samsung M47472K43DB1-CTD 16GB

Samsung M47472K43DB1-CTD 16GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Kingston KMKYF9-MIB 8GB

Kingston KMKYF9-MIB 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Mushkin MR[ABC]4U320GJJM8G 8GB

Mushkin MR[ABC]4U320GJJM8G 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Kingston KKRVFX-MIE 8GB

Kingston KKRVFX-MIE 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M378A5143DB0-CPB 4GB

Samsung M378A5143DB0-CPB 4GB

Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

Crucial Technology CT8G4DFS824A.M8FB 8GB

Crucial Technology CT8G4DFS824A.M8FB 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Samsung M471A5143SB1-CRC 4GB

Samsung M471A5143SB1-CRC 4GB