Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M378A5143DB0-CPB 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Samsung M378A5143DB0-CPB 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
Samsung M378A5143DB0-CPB 4GB

Samsung M378A5143DB0-CPB 4GB

差异

  • 低于PassMark测试中的延时,ns
    24 left arrow 36
    左右 33% 更低的延时
  • 更快的读取速度,GB/s
    16 left arrow 14.4
    测试中的平均数值
  • 更快的写入速度,GB/s
    12.5 left arrow 10.6
    测试中的平均数值
  • 更高的内存带宽,mbps
    19200 left arrow 17000
    左右 1.13% 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M378A5143DB0-CPB 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时,ns
    24 left arrow 36
  • 读取速度,GB/s
    16.0 left arrow 14.4
  • 写入速度,GB/s
    12.5 left arrow 10.6
  • 内存带宽,mbps
    19200 left arrow 17000
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2925 left arrow 2490
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较