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Crucial Technology CT51264BF160BJ.M8F 4GB
Samsung M471B5273DH0-YK0 4GB

Crucial Technology CT51264BF160BJ.M8F 4GB vs Samsung M471B5273DH0-YK0 4GB

总分
star star star star star
Crucial Technology CT51264BF160BJ.M8F 4GB

Crucial Technology CT51264BF160BJ.M8F 4GB

总分
star star star star star
Samsung M471B5273DH0-YK0 4GB

Samsung M471B5273DH0-YK0 4GB

差异 规格 评论

差异

Crucial Technology CT51264BF160BJ.M8F 4GB 需要考虑的原因
Crucial Technology CT51264BF160BJ.M8F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 41
    左右 29% 更低的延时
Samsung M471B5273DH0-YK0 4GB 需要考虑的原因
Samsung M471B5273DH0-YK0 4GB
报告一个错误
  • 更快的读取速度，GB/s
    12.9 left arrow 11.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.0 left arrow 7.3
    测试中的平均数值

规格

完整的技术规格清单
Crucial Technology CT51264BF160BJ.M8F 4GB
Samsung M471B5273DH0-YK0 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    29 left arrow 41
  • 读取速度，GB/s
    11.5 left arrow 12.9
  • 写入速度，GB/s
    7.3 left arrow 9.0
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1892 left arrow 1958

Crucial Technology CT51264BF160BJ.M8F 4GB RAM的比较

Kingston ACR16D3LS1NGG/4G 4GB
Crucial Technology CT4G4DFS8266.M8FF 4GB

Samsung M471B5273DH0-YK0 4GB RAM的比较

Kingston SNY1333D3S9ELC/4G 4GB
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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