Crucial Technology CT51264BF160BJ.M8F 4GB vs Samsung M471B5273DH0-YK0 4GB

Punteggio complessivo

Crucial Technology CT51264BF160BJ.M8F 4GB

Crucial Technology CT51264BF160BJ.M8F 4GB

Punteggio complessivo

Samsung M471B5273DH0-YK0 4GB

Samsung M471B5273DH0-YK0 4GB

Differenze Specifiche tecniche Commenti

Differenze

Crucial Technology CT51264BF160BJ.M8F 4GB

Motivi da considerare
Crucial Technology CT51264BF160BJ.M8F 4GB

Al di sotto della latenza nei test PassMark, ns

29 41

Intorno 29% latenza inferiore

Samsung M471B5273DH0-YK0 4GB

Motivi da considerare
Samsung M471B5273DH0-YK0 4GB

Velocità di lettura più elevata, GB/s

12.9 11.5

Valore medio nei test
Velocità di scrittura più elevata, GB/s

9.0 7.3

Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche

Crucial Technology CT51264BF160BJ.M8F 4GB

Samsung M471B5273DH0-YK0 4GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR3
Latenza in PassMark, ns

29 41
Velocità di lettura, GB/s

11.5 12.9
Velocità di scrittura, GB/s

7.3 9.0
Larghezza di banda della memoria, mbps

12800 12800

Other

Descrizione

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
Temporizzazioni / Velocità di clock

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
Classifica PassMark (più sono, meglio è)

1892 1958

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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