Crucial Technology CT51264BF160B.M16F 4GB vs Crucial Technology CT16G4DFD824A.C16FJ 16GB

总分

Crucial Technology CT51264BF160B.M16F 4GB

Crucial Technology CT51264BF160B.M16F 4GB

总分

Crucial Technology CT16G4DFD824A.C16FJ 16GB

Crucial Technology CT16G4DFD824A.C16FJ 16GB

差异规格评论

差异

Crucial Technology CT51264BF160B.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BF160B.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 29

左右 3% 更低的延时

Crucial Technology CT16G4DFD824A.C16FJ 16GB

需要考虑的原因
Crucial Technology CT16G4DFD824A.C16FJ 16GB

报告一个错误

更快的读取速度，GB/s

15.7 11.8

测试中的平均数值
更快的写入速度，GB/s

11.2 8.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BF160B.M16F 4GB

Crucial Technology CT16G4DFD824A.C16FJ 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 29
读取速度，GB/s

11.8 15.7
写入速度，GB/s

8.2 11.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1854 2974

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5273DH0-CK0 4GB

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Crucial Technology CT16G4SFD8266 16GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Crucial Technology CT16G4SFD824A.C16FHD 16GB

Crucial Technology CT16G4SFD824A.C16FHD 16GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Crucial Technology BLS8G4D240FSE.16FBD 8GB

Crucial Technology BLS8G4D240FSE.16FBD 8GB

SK Hynix CT51264AC800.C16FC 4GB

SK Hynix CT51264AC800.C16FC 4GB

Essencore Limited KD4AGU880-36A180X 16GB

Essencore Limited KD4AGU880-36A180X 16GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240