Elpida EBE21UE8ACUA-8G-E 2GB vs G Skill Intl F4-2400C15-8GFXR 8GB

总分

Elpida EBE21UE8ACUA-8G-E 2GB

Elpida EBE21UE8ACUA-8G-E 2GB

总分

G Skill Intl F4-2400C15-8GFXR 8GB

G Skill Intl F4-2400C15-8GFXR 8GB

差异规格评论

差异

Elpida EBE21UE8ACUA-8G-E 2GB

需要考虑的原因
Elpida EBE21UE8ACUA-8G-E 2GB

报告一个错误

更快的读取速度，GB/s

4 17.8

测试中的平均数值
更快的写入速度，GB/s

2,001.3 13.2

测试中的平均数值

G Skill Intl F4-2400C15-8GFXR 8GB

需要考虑的原因
G Skill Intl F4-2400C15-8GFXR 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 58

左右 -115% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Elpida EBE21UE8ACUA-8G-E 2GB

G Skill Intl F4-2400C15-8GFXR 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 27
读取速度，GB/s

4,796.5 17.8
写入速度，GB/s

2,001.3 13.2
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 9 11 13 14 15
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

768 3337

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston MSI16D3LS1MNG/8G 8GB

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Crucial Technology CT16G4SFD8213.C16FH1 16GB

Crucial Technology CT16G4SFD8213.C16FH1 16GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

G Skill Intl F4-2666C19-8GSXK 8GB

G Skill Intl F4-2666C19-8GSXK 8GB

Corsair CM5S16GM4800A40K2 16GB

Corsair CM5S16GM4800A40K2 16GB

Corsair CMW64GX4M2D3000C16 32GB

Corsair CMW64GX4M2D3000C16 32GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

G Skill Intl F4-3200C18-16GRS 16GB

G Skill Intl F4-3200C18-16GRS 16GB

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takeMS International AG TMS2GB264D082-805G 2GB

Samsung M393A1G43DB0-CPB 8GB

Samsung M393A1G43DB0-CPB 8GB