Elpida EBJ10UE8BAFA-AE-E 1GB vs Corsair CM4X8GD3200C16K4 8GB

总分

Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

总分

Corsair CM4X8GD3200C16K4 8GB

Corsair CM4X8GD3200C16K4 8GB

差异规格评论

差异

Elpida EBJ10UE8BAFA-AE-E 1GB

需要考虑的原因
Elpida EBJ10UE8BAFA-AE-E 1GB

报告一个错误

Corsair CM4X8GD3200C16K4 8GB

需要考虑的原因
Corsair CM4X8GD3200C16K4 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 65

左右 -132% 更低的延时
更快的读取速度，GB/s

18.3 6.1

测试中的平均数值
更快的写入速度，GB/s

14.4 4.2

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Elpida EBJ10UE8BAFA-AE-E 1GB

Corsair CM4X8GD3200C16K4 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

65 28
读取速度，GB/s

6.1 18.3
写入速度，GB/s

4.2 14.4
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

985 3482

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology VDQVE1B16 2GB

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G Skill Intl F3-1333C9-4GIS 4GB

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SK Hynix HMA81GU7AFR8N-UH 8GB

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G Skill Intl F3-2133C9-4GAB 4GB

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Kingston 9965596-002.B00G 4GB

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Kingston 99P5471-002.A00LF 2GB

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Crucial Technology BL8G30C15U4W.M8FE 8GB

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Elpida EBJ10UE8BAFA-AE-E 1GB

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Corsair CM4X8GD3200C16K4 8GB

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Elpida EBJ40UG8EFU0-GN-F 4GB

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Patriot Memory (PDP Systems) PSD44G240041 4GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Kingston 9905702-184.A00G 8GB

Kingston 9905702-184.A00G 8GB

Samsung M393B1K70CH0-CH9 8GB

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Samsung V-GeN D4S4GL30A16TS5 4GB

Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

Kingston KF3200C20S4/32GX 32MB

Kingston KF3200C20S4/32GX 32MB