Elpida EBJ10UE8BAFA-AE-E 1GB vs G Skill Intl F4-4000C17-8GTZRB 8GB

总分

Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

总分

G Skill Intl F4-4000C17-8GTZRB 8GB

G Skill Intl F4-4000C17-8GTZRB 8GB

差异规格评论

差异

Elpida EBJ10UE8BAFA-AE-E 1GB

需要考虑的原因
Elpida EBJ10UE8BAFA-AE-E 1GB

报告一个错误

G Skill Intl F4-4000C17-8GTZRB 8GB

需要考虑的原因
G Skill Intl F4-4000C17-8GTZRB 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 65

左右 -160% 更低的延时
更快的读取速度，GB/s

21 6.1

测试中的平均数值
更快的写入速度，GB/s

19.4 4.2

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Elpida EBJ10UE8BAFA-AE-E 1GB

G Skill Intl F4-4000C17-8GTZRB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

65 25
读取速度，GB/s

6.1 21.0
写入速度，GB/s

4.2 19.4
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

985 4129

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLS8G4S240FSD.16FBD 8GB

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G Skill Intl F3-14900CL9-4GBSR 4GB

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Kingston 99U5584-001.A00LF 4GB

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SK Hynix HMA81GU6MFR8N-UH 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

SK Hynix HMA82GU6CJR8N-XN 16GB

SK Hynix HMA82GU6CJR8N-XN 16GB

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G Skill Intl F4-2800C16-8GRK 8GB

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Patriot Memory (PDP Systems) PSD48G266681S 8GB

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SK Hynix HMA41GS6AFR8N-TF 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

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Samsung 1600 CL10 Series 8GB

Gold Key Technology Co Ltd NMUD416E82-3000D 16GB

Gold Key Technology Co Ltd NMUD416E82-3000D 16GB

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Kingston 99U5474-010.A00LF 2GB

Crucial Technology CT16G4DFD824A.C16FJ 16GB

Crucial Technology CT16G4DFD824A.C16FJ 16GB