Elpida EBJ21UE8BDF0-DJ-F 2GB vs Corsair CMH16GX4M2E3200C16 8GB

总分

Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

总分

Corsair CMH16GX4M2E3200C16 8GB

Corsair CMH16GX4M2E3200C16 8GB

差异规格评论

差异

Elpida EBJ21UE8BDF0-DJ-F 2GB

需要考虑的原因
Elpida EBJ21UE8BDF0-DJ-F 2GB

报告一个错误

低于PassMark测试中的延时，ns

25 30

左右 17% 更低的延时

Corsair CMH16GX4M2E3200C16 8GB

需要考虑的原因
Corsair CMH16GX4M2E3200C16 8GB

报告一个错误

更快的读取速度，GB/s

19 13.8

测试中的平均数值
更快的写入速度，GB/s

14.2 8.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Elpida EBJ21UE8BDF0-DJ-F 2GB

Corsair CMH16GX4M2E3200C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 30
读取速度，GB/s

13.8 19.0
写入速度，GB/s

8.2 14.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2152 3435

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Apacer Technology AQD-D4U8GN26-SE 8GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Kingston KVR533D2N4 512MB

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Elpida EBJ21UE8BDF0-DJ-F 2GB

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Samsung M393B1G70QH0-YK0 8GB

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Crucial Technology CT8G4DFD8213.M16FA 8GB

Crucial Technology CT8G4DFD8213.M16FA 8GB

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Kingston 9965667-001.A00G 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Crucial Technology BLS4G4D26BFSB.8FE 4GB

Crucial Technology BLS4G4D26BFSB.8FE 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

A-DATA Technology DDR4 3000 8GB

A-DATA Technology DDR4 3000 8GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Corsair CMR16GX4M2K4266C19 8GB

Corsair CMR16GX4M2K4266C19 8GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Kingston 9905702-136.A00G 8GB

Kingston 9905702-136.A00G 8GB