Samsung M393B1G70QH0-YK0 8GB vs G Skill Intl F4-3000C14-8GTZR 8GB

总分

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

总分

G Skill Intl F4-3000C14-8GTZR 8GB

G Skill Intl F4-3000C14-8GTZR 8GB

差异规格评论

差异

Samsung M393B1G70QH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70QH0-YK0 8GB

报告一个错误

G Skill Intl F4-3000C14-8GTZR 8GB

需要考虑的原因
G Skill Intl F4-3000C14-8GTZR 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 52

左右 -100% 更低的延时
更快的读取速度，GB/s

19.5 9.8

测试中的平均数值
更快的写入速度，GB/s

15.3 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70QH0-YK0 8GB

G Skill Intl F4-3000C14-8GTZR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 26
读取速度，GB/s

9.8 19.5
写入速度，GB/s

8.0 15.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2179 3635

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1G70QH0-YK0 8GB

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SK Hynix HMT325S6CFR8C-H9 2GB

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G Skill Intl F4-3600C16-16GTZRC 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

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A-DATA Technology DDR3 1333G 2GB

A-DATA Technology DDR3 1333G 2GB

Corsair CMSX16GX4M2A2666C18 8GB

Corsair CMSX16GX4M2A2666C18 8GB

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Samsung M3 78T2863EHS-CF7 1GB

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Micron Technology 36ASF4G72LZ-2G3A1 32GB