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Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-4000C16-16GTRS 16GB

Samsung M378B5773DH0-CH9 2GB vs G Skill Intl F4-4000C16-16GTRS 16GB

总分
star star star star star
Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分
star star star star star
G Skill Intl F4-4000C16-16GTRS 16GB

G Skill Intl F4-4000C16-16GTRS 16GB

差异 规格 评论

差异

Samsung M378B5773DH0-CH9 2GB 需要考虑的原因
Samsung M378B5773DH0-CH9 2GB
报告一个错误
G Skill Intl F4-4000C16-16GTRS 16GB 需要考虑的原因
G Skill Intl F4-4000C16-16GTRS 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 39
    左右 -56% 更低的延时
  • 更快的读取速度，GB/s
    18.7 left arrow 11.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.2 left arrow 7.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-4000C16-16GTRS 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 25
  • 读取速度，GB/s
    11.7 left arrow 18.7
  • 写入速度，GB/s
    7.2 left arrow 17.2
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1749 left arrow 4039

Samsung M378B5773DH0-CH9 2GB RAM的比较

Samsung M378B5673FH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB

G Skill Intl F4-4000C16-16GTRS 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-4000C16-16GTRS 16GB
G Skill Intl F4-4000C16-16GTRS 16GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
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Crucial Technology CT8G4DFS632A.M4FB 8GB
Crucial Technology CT8G4DFS632A.M4FB 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
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内存RAM
Strontium EVMT8G1600U86S 8GB
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Gold Key Technology Co Ltd NMUD480E84-3000D 8GB
Gold Key Technology Co Ltd NMUD480E84-3000D 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
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Wilk Elektronik S.A. GR2400D464L17S/4G 4GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
SK Hynix HMA82GU6DJR8N-VK 16GB
SK Hynix HMA82GU6DJR8N-VK 16GB
内存RAM
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
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G Skill Intl F4-2400C17-8GDBVR 8GB
内存RAM
Kingston 99U5474-013.A00LF 2GB
Kingston 99U5474-013.A00LF 2GB
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Gold Key Technology Co Ltd NMSO480E82-3200E 8GB
内存RAM
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Corsair CML16GX3M2A1600C10 8GB
Kingston M378A1K43CB2-CRC 8GB
Kingston M378A1K43CB2-CRC 8GB
内存RAM
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
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A-DATA Technology AX4S2800316G18-B 16GB
内存RAM
Kingston 9905471-006.A00LF 4GB
Kingston 9905471-006.A00LF 4GB
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Samsung M392A4K40BM0-CRC 32GB
内存RAM
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SK Hynix HMT351R7EFR8C-RD 4GB
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G Skill Intl F4-3200C14-8GVR 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
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Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N
内存RAM