Elpida EBJ21UE8BDF0-DJ-F 2GB vs Crucial Technology CT16G4SFD824A.M16FD 16GB

总分

Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

总分

Crucial Technology CT16G4SFD824A.M16FD 16GB

Crucial Technology CT16G4SFD824A.M16FD 16GB

差异规格评论

差异

Elpida EBJ21UE8BDF0-DJ-F 2GB

需要考虑的原因
Elpida EBJ21UE8BDF0-DJ-F 2GB

报告一个错误

低于PassMark测试中的延时，ns

25 27

左右 7% 更低的延时

Crucial Technology CT16G4SFD824A.M16FD 16GB

需要考虑的原因
Crucial Technology CT16G4SFD824A.M16FD 16GB

报告一个错误

更快的读取速度，GB/s

14.1 13.8

测试中的平均数值
更快的写入速度，GB/s

11.0 8.2

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Elpida EBJ21UE8BDF0-DJ-F 2GB

Crucial Technology CT16G4SFD824A.M16FD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 27
读取速度，GB/s

13.8 14.1
写入速度，GB/s

8.2 11.0
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2152 2552

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Micron Technology 9ASF51272PZ-2G1A2 4GB

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Kingston KVR533D2N4 512MB

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Gloway International Co. Ltd. TYA4U3000E16081C 8GB

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PNY Electronics PNY 2GB

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Kingston 9965589-007.D01G 8GB

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Samsung M378A1G44AB0-CWE 8GB

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Corsair CMK8GX4M2A2400C16 4GB

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Kingston 9965516-112.A00LF 16GB

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Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

SK Hynix HMA81GU6JJR8N-VK 8GB

SK Hynix HMA81GU6JJR8N-VK 8GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Transcend Information JM3200HLB-8G 8GB

Transcend Information JM3200HLB-8G 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Wilk Elektronik S.A. GR2666D464L19/16G 16GB

Wilk Elektronik S.A. GR2666D464L19/16G 16GB

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

Corsair CMK32GX4M2A2133C13 16GB

Corsair CMK32GX4M2A2133C13 16GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

V-GEN D4H4GL30A8TS5 4GB

V-GEN D4H4GL30A8TS5 4GB