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Elpida EBJ21UE8BDF0-DJ-F 2GB
G Skill Intl F4-3733C17-4GTZ 4GB

Elpida EBJ21UE8BDF0-DJ-F 2GB vs G Skill Intl F4-3733C17-4GTZ 4GB

总分
star star star star star
Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

总分
star star star star star
G Skill Intl F4-3733C17-4GTZ 4GB

G Skill Intl F4-3733C17-4GTZ 4GB

差异 规格 评论

差异

Elpida EBJ21UE8BDF0-DJ-F 2GB 需要考虑的原因
Elpida EBJ21UE8BDF0-DJ-F 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 31
    左右 19% 更低的延时
G Skill Intl F4-3733C17-4GTZ 4GB 需要考虑的原因
G Skill Intl F4-3733C17-4GTZ 4GB
报告一个错误
  • 更快的读取速度，GB/s
    16.5 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.6 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Elpida EBJ21UE8BDF0-DJ-F 2GB
G Skill Intl F4-3733C17-4GTZ 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 31
  • 读取速度，GB/s
    13.8 left arrow 16.5
  • 写入速度，GB/s
    8.2 left arrow 15.6
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2152 left arrow 3142

Elpida EBJ21UE8BDF0-DJ-F 2GB RAM的比较

Kingston ACR256X64D3S1333C9 2GB
Micron Technology CT8G4DFD8213.16FA2 8GB

G Skill Intl F4-3733C17-4GTZ 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8G
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
SK Hynix HMAA2GU6AJR8N-XN 16GB
SK Hynix HMAA2GU6AJR8N-XN 16GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
Crucial Technology CT32G4SFD832A.M16FF 32GB
Crucial Technology CT32G4SFD832A.M16FF 32GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Ramaxel Technology RMUA5200ME78HAF-3200 8GB
Ramaxel Technology RMUA5200ME78HAF-3200 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT16G4DFD8213.C16FBR 16GB
Crucial Technology CT16G4DFD8213.C16FBR 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Crucial Technology CT16G4S24AM.M16FB 16GB
Crucial Technology CT16G4S24AM.M16FB 16GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Kingston HP37D4U1S8ME-8X 8GB
Kingston HP37D4U1S8ME-8X 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Crucial Technology CT16G4SFS832A.C8FB 16GB
Crucial Technology CT16G4SFS832A.C8FB 16GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
Crucial Technology BLS4G4S240FSD.8FBD 4GB
Crucial Technology BLS4G4S240FSD.8FBD 4GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Kingston HX316C10F/8 8GB
Kingston HX316C10F/8 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
G Skill Intl F4-2666C19-16GRS 16GB
G Skill Intl F4-2666C19-16GRS 16GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
内存RAM