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Corsair CMY8GX3M2A2666C10 4GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

Corsair CMY8GX3M2A2666C10 4GB vs OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

总分
star star star star star
Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分
star star star star star
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

差异 规格 评论

差异

Corsair CMY8GX3M2A2666C10 4GB 需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    17 left arrow 54
    左右 69% 更低的延时
  • 更快的读取速度，GB/s
    22.8 left arrow 15.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.4 left arrow 14.3
    测试中的平均数值
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB 需要考虑的原因
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
报告一个错误
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Corsair CMY8GX3M2A2666C10 4GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    17 left arrow 54
  • 读取速度，GB/s
    22.8 left arrow 15.2
  • 写入速度，GB/s
    15.4 left arrow 14.3
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    3391 left arrow 2938

Corsair CMY8GX3M2A2666C10 4GB RAM的比较

Micron Technology 4ATF1G64AZ-3G2B1 8GB
Crucial Technology CT8G48C40U5.M4A1 8GB

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Corsair CMY8GX3M2A2666C10 4GB
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OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
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