Elpida EBJ21UE8BDF0-DJ-F 2GB vs Samsung M378B5773CH0-CH9 2GB

总分

Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

总分

Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

差异规格评论

差异

Elpida EBJ21UE8BDF0-DJ-F 2GB

需要考虑的原因
Elpida EBJ21UE8BDF0-DJ-F 2GB

报告一个错误

低于PassMark测试中的延时，ns

25 39

左右 36% 更低的延时
更快的读取速度，GB/s

13.8 12.8

测试中的平均数值
更快的写入速度，GB/s

8.2 7.4

测试中的平均数值

Samsung M378B5773CH0-CH9 2GB

需要考虑的原因
Samsung M378B5773CH0-CH9 2GB

报告一个错误

规格

完整的技术规格清单

Elpida EBJ21UE8BDF0-DJ-F 2GB

Samsung M378B5773CH0-CH9 2GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

25 39
读取速度，GB/s

13.8 12.8
写入速度，GB/s

8.2 7.4
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2152 1770

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Apacer Technology 78.CAGNK.4040B 8GB

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Kingston 99U5474-013.A00LF 2GB

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G Skill Intl F4-3200C15-16GTZKY 16GB

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Peak Electronics 256X64M-67E 2GB

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Essencore Limited IM44GU48N26-GIIHA0 4GB

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G Skill Intl F3-1600C11-4GIS 4GB

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Corsair CMV8GX4M1L2400C16 8GB

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A-DATA Technology AD73I1B1672EG 2GB

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Kingston 99U5469-045.A00LF 4GB

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Crucial Technology CT4G4SFS8213.C8FBD1 4GB

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Corsair CMD8GX3M2A2933C12 4GB

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Crucial Technology BL4G24C16U4B.8FE 4GB

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Samsung M393B1G70BH0-CK0 8GB

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Samsung M393A5143DB0-CRC 4GB

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Samsung M393B2G70BH0-CK0 16GB

Kingston ACR26D4S9D8ME-16 16GB

Kingston ACR26D4S9D8ME-16 16GB

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

SK Hynix HMAA2GU6AJR8N-XN 16GB

SK Hynix HMAA2GU6AJR8N-XN 16GB

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

Micron Technology 9ASF51272PZ-2G1B1 4GB

Micron Technology 9ASF51272PZ-2G1B1 4GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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G Skill Intl F4-3200C16-16GTZN 16GB

G Skill Intl F4-3200C16-16GTZN 16GB