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Elpida EBJ21UE8BDF0-DJ-F 2GB
SK Hynix HMA81GU6AFR8N-UH 8GB

Elpida EBJ21UE8BDF0-DJ-F 2GB vs SK Hynix HMA81GU6AFR8N-UH 8GB

总分
star star star star star
Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

总分
star star star star star
SK Hynix HMA81GU6AFR8N-UH 8GB

SK Hynix HMA81GU6AFR8N-UH 8GB

差异 规格 评论

差异

Elpida EBJ21UE8BDF0-DJ-F 2GB 需要考虑的原因
Elpida EBJ21UE8BDF0-DJ-F 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 34
    左右 26% 更低的延时
SK Hynix HMA81GU6AFR8N-UH 8GB 需要考虑的原因
SK Hynix HMA81GU6AFR8N-UH 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.1 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.4 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Elpida EBJ21UE8BDF0-DJ-F 2GB
SK Hynix HMA81GU6AFR8N-UH 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 34
  • 读取速度，GB/s
    13.8 left arrow 15.1
  • 写入速度，GB/s
    8.2 left arrow 10.4
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2152 left arrow 2620

Elpida EBJ21UE8BDF0-DJ-F 2GB RAM的比较

Kingston ACR256X64D3S1333C9 2GB
Micron Technology CT8G4DFD8213.16FA2 8GB

SK Hynix HMA81GU6AFR8N-UH 8GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMR32GX4M2C3333C16 16GB
Corsair CMR32GX4M2C3333C16 16GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Samsung M471A5244BB0-CRC 4GB
Samsung M471A5244BB0-CRC 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378A1K43BB1-CTD 16GB
Samsung M378A1K43BB1-CTD 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
A-DATA Technology AM1P26KC4U1-BACS 4GB
A-DATA Technology AM1P26KC4U1-BACS 4GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Crucial Technology BLS16G4D240FSC.16FBR 16GB
Crucial Technology BLS16G4D240FSC.16FBR 16GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
Apacer Technology 76.C102G.D170B 8GB
Apacer Technology 76.C102G.D170B 8GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Micron Technology 16ATF2G64AZ-2G1B1 16GB
Micron Technology 16ATF2G64AZ-2G1B1 16GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Crucial Technology BLS4G4D240FSA.8FAD 4GB
Crucial Technology BLS4G4D240FSA.8FAD 4GB
内存RAM
Samsung M471B5773DH0-CK0 2GB
Samsung M471B5773DH0-CK0 2GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Kingston 9905625-096.A00G 16GB
Kingston 9905625-096.A00G 16GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
DSL Memory D4SS1G081SH24A-A 8GB
DSL Memory D4SS1G081SH24A-A 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
NSITEXE Inc Visenta 16GB
NSITEXE Inc Visenta 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Apacer Technology GD2.0927WH.001 8GB
Apacer Technology GD2.0927WH.001 8GB
内存RAM