Elpida EBJ40EG8BFWB-JS-F 4GB vs Corsair CMD32GX4M4C3200C16-R 8GB

总分

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

总分

Corsair CMD32GX4M4C3200C16-R 8GB

Corsair CMD32GX4M4C3200C16-R 8GB

差异规格评论

差异

Elpida EBJ40EG8BFWB-JS-F 4GB

需要考虑的原因
Elpida EBJ40EG8BFWB-JS-F 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 31

左右 16% 更低的延时

Corsair CMD32GX4M4C3200C16-R 8GB

需要考虑的原因
Corsair CMD32GX4M4C3200C16-R 8GB

报告一个错误

更快的读取速度，GB/s

17.5 13.9

测试中的平均数值
更快的写入速度，GB/s

14.5 9.6

测试中的平均数值
更高的内存带宽，mbps

17000 14200

左右 1.2 更高的带宽

规格

完整的技术规格清单

Elpida EBJ40EG8BFWB-JS-F 4GB

Corsair CMD32GX4M4C3200C16-R 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 31
读取速度，GB/s

13.9 17.5
写入速度，GB/s

9.6 14.5
内存带宽，mbps

14200 17000

Other

描述

PC3-14200, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2558 3510

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B2G70BH0-CH9 16GB

Gloway International Co. Ltd. WAR4U2666D19081C 8GB

Gloway International Co. Ltd. WAR4U2666D19081C 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

G Skill Intl F4-2400C16-8GRS 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMK64GX4M4B3466C16 16GB

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Apacer Technology 78.C1GET.9K10C 8GB

Apacer Technology 78.C1GET.9K10C 8GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB