Elpida EBJ40UG8BBU0-GN-F 4GB vs Kingston 9905702-400.A00G 8GB

总分

Elpida EBJ40UG8BBU0-GN-F 4GB

Elpida EBJ40UG8BBU0-GN-F 4GB

总分

Kingston 9905702-400.A00G 8GB

Kingston 9905702-400.A00G 8GB

差异规格评论

差异

Elpida EBJ40UG8BBU0-GN-F 4GB

需要考虑的原因
Elpida EBJ40UG8BBU0-GN-F 4GB

报告一个错误

Kingston 9905702-400.A00G 8GB

需要考虑的原因
Kingston 9905702-400.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 41

左右 -37% 更低的延时
更快的读取速度，GB/s

18.5 12.5

测试中的平均数值
更快的写入速度，GB/s

15.0 8.2

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Elpida EBJ40UG8BBU0-GN-F 4GB

Kingston 9905702-400.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 30
读取速度，GB/s

12.5 18.5
写入速度，GB/s

8.2 15.0
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2087 3423

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 99U5595-005.A00LF 2GB

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Kingston 9905403-444.A00LF 4GB

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Kingston KHX2400C14S4/8G 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

G Skill Intl F4-2800C15-8GTXG 8GB

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Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M474A2K43BB1-CRC 16GB

Samsung M474A2K43BB1-CRC 16GB