Kingston ACR256X64D3S1333C9 2GB vs Mushkin MR[ABC]4U360JNNM16G 16GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Mushkin MR[ABC]4U360JNNM16G 16GB

Mushkin MR[ABC]4U360JNNM16G 16GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 28

左右 4% 更低的延时

Mushkin MR[ABC]4U360JNNM16G 16GB

需要考虑的原因
Mushkin MR[ABC]4U360JNNM16G 16GB

报告一个错误

更快的读取速度，GB/s

16.5 11.9

测试中的平均数值
更快的写入速度，GB/s

16.5 8.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Mushkin MR[ABC]4U360JNNM16G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 28
读取速度，GB/s

11.9 16.5
写入速度，GB/s

8.5 16.5
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1620 3634

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4SFRA266.C8FE 8GB

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Kingston KHX318C10FR/8G 8GB

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G Skill Intl F4-2933C14-8GFX 8GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Kingston 9905664-010.A00G 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

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Micron Technology 4ATF51264HZ-2G3E2 4GB

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Kingston 99U5474-038.A00LF 4GB

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Hewlett-Packard 48U45AA# 16GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

Corsair CMD16GX4M2B2800C14 8GB

Corsair CMD16GX4M2B2800C14 8GB