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Elpida EBJ40UG8BBU0-GN-F 4GB
Samsung M471A1K43EB1-CWE 8GB

Elpida EBJ40UG8BBU0-GN-F 4GB vs Samsung M471A1K43EB1-CWE 8GB

总分
star star star star star
Elpida EBJ40UG8BBU0-GN-F 4GB

Elpida EBJ40UG8BBU0-GN-F 4GB

总分
star star star star star
Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

差异 规格 评论

差异

Elpida EBJ40UG8BBU0-GN-F 4GB 需要考虑的原因
Elpida EBJ40UG8BBU0-GN-F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    41 left arrow 46
    左右 11% 更低的延时
Samsung M471A1K43EB1-CWE 8GB 需要考虑的原因
Samsung M471A1K43EB1-CWE 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16 left arrow 12.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.4 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
Elpida EBJ40UG8BBU0-GN-F 4GB
Samsung M471A1K43EB1-CWE 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 46
  • 读取速度，GB/s
    12.5 left arrow 16.0
  • 写入速度，GB/s
    8.2 left arrow 12.4
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2087 left arrow 2660

Elpida EBJ40UG8BBU0-GN-F 4GB RAM的比较

SK Hynix HMT451U6AFR8C-PB 4GB
Corsair CM4B8G2J2666A15D 8GB

Samsung M471A1K43EB1-CWE 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Elpida EBJ40UG8BBU0-GN-F 4GB
Elpida EBJ40UG8BBU0-GN-F 4GB
Samsung M471A1K43EB1-CWE 8GB
Samsung M471A1K43EB1-CWE 8GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
G Skill Intl F4-3600C16-8GTZRC 8GB
G Skill Intl F4-3600C16-8GTZRC 8GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Maxsun MSD44G24Q0 4GB
Maxsun MSD44G24Q0 4GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Ramaxel Technology RMSA3260ME78HAF-2666 8GB
Ramaxel Technology RMSA3260ME78HAF-2666 8GB
内存RAM
Ramaxel Technology RMT3160ED58E9W1600 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB
Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
G Skill Intl F4-3200C14-16GTZDCB 16GB
G Skill Intl F4-3200C14-16GTZDCB 16GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
A-DATA Technology EXTREME DDR2 800+ 2GB
A-DATA Technology EXTREME DDR2 800+ 2GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Kingston ACR26D4U9D8ME-16 16GB
Kingston ACR26D4U9D8ME-16 16GB
内存RAM
Kingston 9905471-071.A00LF 8GB
Kingston 9905471-071.A00LF 8GB
Corsair CMK32GX4M2C3333C16 16GB
Corsair CMK32GX4M2C3333C16 16GB
内存RAM
Kingston 9905471-006.A00LF 4GB
Kingston 9905471-006.A00LF 4GB
G Skill Intl F4-3000C15-4GTZB 4GB
G Skill Intl F4-3000C15-4GTZB 4GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Crucial Technology CT16G4SFD824A.M16FJ 16GB
Crucial Technology CT16G4SFD824A.M16FJ 16GB
内存RAM
A-DATA Technology DDR3 1866 2OZ 4GB
A-DATA Technology DDR3 1866 2OZ 4GB
INTENSO GKE800UD102408-2133 8GB
INTENSO GKE800UD102408-2133 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMH32GX4M2Z3200C16 16GB
Corsair CMH32GX4M2Z3200C16 16GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology CT4G4DFS8213.C8FAR2 4GB
Crucial Technology CT4G4DFS8213.C8FAR2 4GB
内存RAM