Elpida EBJ40UG8EFU0-GN-F 4GB vs Corsair CMT32GX4M2D3600C18 16GB

总分

Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

总分

Corsair CMT32GX4M2D3600C18 16GB

Corsair CMT32GX4M2D3600C18 16GB

差异规格评论

差异

Elpida EBJ40UG8EFU0-GN-F 4GB

需要考虑的原因
Elpida EBJ40UG8EFU0-GN-F 4GB

报告一个错误

Corsair CMT32GX4M2D3600C18 16GB

需要考虑的原因
Corsair CMT32GX4M2D3600C18 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 43

左右 -39% 更低的延时
更快的读取速度，GB/s

19.8 12.7

测试中的平均数值
更快的写入速度，GB/s

15.6 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Elpida EBJ40UG8EFU0-GN-F 4GB

Corsair CMT32GX4M2D3600C18 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 31
读取速度，GB/s

12.7 19.8
写入速度，GB/s

8.0 15.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2057 3687

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

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Crucial Technology BLS8G4D30AESBK.M8FE 8GB

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SK Hynix HMA451U6AFR8N-TF 4GB

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Crucial Technology BL8G32C16U4R.M8FE 8GB

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Kingston ACR512X64D3S13C9G 4GB

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Crucial Technology BLS8G4D240FSC.16FARG 8GB

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Kingston KHX1600C10D3/8G 8GB

Kingston KHX1600C10D3/8G 8GB

Kllisre D4 8G 8GB

Kllisre D4 8G 8GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Kingston HX432C15PB3/16G 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 9ASF51272PZ-2G3B1 4GB

Micron Technology 9ASF51272PZ-2G3B1 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BLM16G40C18U4B.M8FB1 16GB

Crucial Technology BLM16G40C18U4B.M8FB1 16GB