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Elpida EBJ40UG8EFU0-GN-F 4GB
Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

Elpida EBJ40UG8EFU0-GN-F 4GB vs Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

总分
star star star star star
Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

总分
star star star star star
Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

差异 规格 评论

差异

Elpida EBJ40UG8EFU0-GN-F 4GB 需要考虑的原因
Elpida EBJ40UG8EFU0-GN-F 4GB
报告一个错误
Crucial Technology BLT8G4D32AET4K.M8FE1 8GB 需要考虑的原因
Crucial Technology BLT8G4D32AET4K.M8FE1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 43
    左右 -65% 更低的延时
  • 更快的读取速度，GB/s
    18.8 left arrow 12.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.6 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Elpida EBJ40UG8EFU0-GN-F 4GB
Crucial Technology BLT8G4D32AET4K.M8FE1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 26
  • 读取速度，GB/s
    12.7 left arrow 18.8
  • 写入速度，GB/s
    8.0 left arrow 15.6
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2057 left arrow 3733

Elpida EBJ40UG8EFU0-GN-F 4GB RAM的比较

Crucial Technology CT51264BF160B.M16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMT451S6AFR8A-PB 4GB

Crucial Technology BLT8G4D32AET4K.M8FE1 8GB RAM的比较

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
G Skill Intl F4-4000C19-16GTZKK 16GB
G Skill Intl F4-4000C19-16GTZKK 16GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Kingston ACR26D4S9D8MD-16 16GB
Kingston ACR26D4S9D8MD-16 16GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Kingston 16ATF2G64AZ-2G1B1 8GB
Kingston 16ATF2G64AZ-2G1B1 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Kingston 9905702-136.A00G 8GB
Kingston 9905702-136.A00G 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-3200C14-32GTRG 32GB
G Skill Intl F4-3200C14-32GTRG 32GB
内存RAM
Kingston SNY1600S11-4G-EDEG 4GB
Kingston SNY1600S11-4G-EDEG 4GB
Micron Technology 4ATF51264HZ-2G3E2 4GB
Micron Technology 4ATF51264HZ-2G3E2 4GB
内存RAM
Elpida EBJ40UG8EFU0-GN-F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Crucial Technology BLT8G4D32AET4K.M8FE1 8GB
Crucial Technology BLT8G4D32AET4K.M8FE1 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Kingston HP24D4U7S8MBP-8 8GB
Kingston HP24D4U7S8MBP-8 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Crucial Technology BLS8G4S26BFSD.16FBD2 8GB
Crucial Technology BLS8G4S26BFSD.16FBD2 8GB
内存RAM
Elpida EBJ10UE8BAFA-AE-E 1GB
Elpida EBJ10UE8BAFA-AE-E 1GB
G Skill Intl F4-2666C16-8GRB 8GB
G Skill Intl F4-2666C16-8GRB 8GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Corsair CMK16GX4M1B3000C15 16GB
Corsair CMK16GX4M1B3000C15 16GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Apacer Technology 78.CAGPN.AZ50C 8GB
Apacer Technology 78.CAGPN.AZ50C 8GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Patriot Memory (PDP Systems) PSD416G21332S 16GB
Patriot Memory (PDP Systems) PSD416G21332S 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
SK Hynix HMA425S6BJR6N-UH 2GB
SK Hynix HMA425S6BJR6N-UH 2GB
内存RAM