Elpida EBJ40UG8EFU0-GN-F 4GB vs Kingston HP26D4U9S8ME-8X 8GB

总分

Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

总分

Kingston HP26D4U9S8ME-8X 8GB

Kingston HP26D4U9S8ME-8X 8GB

差异规格评论

差异

Elpida EBJ40UG8EFU0-GN-F 4GB

需要考虑的原因
Elpida EBJ40UG8EFU0-GN-F 4GB

报告一个错误

Kingston HP26D4U9S8ME-8X 8GB

需要考虑的原因
Kingston HP26D4U9S8ME-8X 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 43

左右 -43% 更低的延时
更快的读取速度，GB/s

16.3 12.7

测试中的平均数值
更快的写入速度，GB/s

12.2 8.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Elpida EBJ40UG8EFU0-GN-F 4GB

Kingston HP26D4U9S8ME-8X 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 30
读取速度，GB/s

12.7 16.3
写入速度，GB/s

8.0 12.2
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2057 3052

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix DDR2 800 2G 2GB

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Micron Technology 36ASF4G72PZ-2G1B1 32GB

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A-DATA Technology AD4S320038G22-B 8GB

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Samsung M393A1G40DB0-CPB 8GB

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Panram International Corporation D4U2666P-8G 8GB

Panram International Corporation D4U2666P-8G 8GB

Unifosa Corporation GU502203EP0201 1GB

Unifosa Corporation GU502203EP0201 1GB

Golden Empire CL16-18-18 D4-3200 8GB

Golden Empire CL16-18-18 D4-3200 8GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Smart Modular SF4641G8CK8IWGKSEG 8GB

Smart Modular SF4641G8CK8IWGKSEG 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Corsair CM4X8GF2666C16K4 8GB

Corsair CM4X8GF2666C16K4 8GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

Patriot Memory (PDP Systems) 2666 C15 Series 4GB

Patriot Memory (PDP Systems) 2666 C15 Series 4GB