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Elpida EBJ40UG8EFU0-GN-F 4GB
Samsung M391A1G43DB0-CPB 8GB

Elpida EBJ40UG8EFU0-GN-F 4GB vs Samsung M391A1G43DB0-CPB 8GB

总分
star star star star star
Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

总分
star star star star star
Samsung M391A1G43DB0-CPB 8GB

Samsung M391A1G43DB0-CPB 8GB

差异 规格 评论

差异

Elpida EBJ40UG8EFU0-GN-F 4GB 需要考虑的原因
Elpida EBJ40UG8EFU0-GN-F 4GB
报告一个错误
  • 更快的读取速度，GB/s
    12.7 left arrow 11.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.0 left arrow 6.8
    测试中的平均数值
Samsung M391A1G43DB0-CPB 8GB 需要考虑的原因
Samsung M391A1G43DB0-CPB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 43
    左右 -39% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Elpida EBJ40UG8EFU0-GN-F 4GB
Samsung M391A1G43DB0-CPB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 31
  • 读取速度，GB/s
    12.7 left arrow 11.7
  • 写入速度，GB/s
    8.0 left arrow 6.8
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2057 left arrow 1763

Elpida EBJ40UG8EFU0-GN-F 4GB RAM的比较

Crucial Technology CT51264BF160B.M16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMT451S6AFR8A-PB 4GB

Samsung M391A1G43DB0-CPB 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9965525-155.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Corsair CM4X16GE2666C18S2 16GB
Corsair CM4X16GE2666C18S2 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Crucial Technology BLS8G4D240FSC.M16FAD 8GB
Crucial Technology BLS8G4D240FSC.M16FAD 8GB
内存RAM
Elpida EBJ40UG8EFU0-GN-F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Samsung M391A1G43DB0-CPB 8GB
Samsung M391A1G43DB0-CPB 8GB
内存RAM
Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
Kingston KF3200C16D4/8GX 8GB
Kingston KF3200C16D4/8GX 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Corsair CM4X4GD3000C16K2 4GB
Corsair CM4X4GD3000C16K2 4GB
内存RAM
A-DATA Technology DDR3 1600 2OZ 4GB
A-DATA Technology DDR3 1600 2OZ 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
内存RAM
Samsung M391B5273DH0-YK0 4GB
Samsung M391B5273DH0-YK0 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
内存RAM
Team Group Inc. ZEUS-2133 8GB
Team Group Inc. ZEUS-2133 8GB
Kingston 9965604-033.D00G 16GB
Kingston 9965604-033.D00G 16GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-3333C16-16GTZB 16GB
G Skill Intl F4-3333C16-16GTZB 16GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Crucial Technology BLS8G4D240FSEK.8FBD 8GB
Crucial Technology BLS8G4D240FSEK.8FBD 8GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
G Skill Intl F4-3400C16-8GTZSW 8GB
G Skill Intl F4-3400C16-8GTZSW 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Avant Technology J641GU42J7240ND 8GB
Avant Technology J641GU42J7240ND 8GB
内存RAM
Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173EB0-YK0 4GB
Crucial Technology BL8G32C16U4BL.8FE 8GB
Crucial Technology BL8G32C16U4BL.8FE 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT4G4DFS8266.M8FG 4GB
Crucial Technology CT4G4DFS8266.M8FG 4GB
内存RAM