Elpida EBJ41UF8BDU5-GN-F 4GB vs Crucial Technology CT16G4SFD824A.M16FD 16GB

总分

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

总分

Crucial Technology CT16G4SFD824A.M16FD 16GB

Crucial Technology CT16G4SFD824A.M16FD 16GB

差异规格评论

差异

Elpida EBJ41UF8BDU5-GN-F 4GB

需要考虑的原因
Elpida EBJ41UF8BDU5-GN-F 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 27

左右 11% 更低的延时
更快的读取速度，GB/s

14.4 14.1

测试中的平均数值

Crucial Technology CT16G4SFD824A.M16FD 16GB

需要考虑的原因
Crucial Technology CT16G4SFD824A.M16FD 16GB

报告一个错误

更快的写入速度，GB/s

11.0 9.4

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Elpida EBJ41UF8BDU5-GN-F 4GB

Crucial Technology CT16G4SFD824A.M16FD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

24 27
读取速度，GB/s

14.4 14.1
写入速度，GB/s

9.4 11.0
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2267 2552

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung V-GeN D4S8GL24A8 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Kingston 9965589-013.A00G 8GB

Kingston 9965589-013.A00G 8GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Kingmax Semiconductor GSJF62F-DA---------- 4GB

Kingmax Semiconductor GSJF62F-DA---------- 4GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

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Kingston MSI32D4S2S1ME-8 8GB

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Samsung M393B1G70BH0-CK0 8GB

Kingston 16ATF2G64AZ-2G1B1 8GB

Kingston 16ATF2G64AZ-2G1B1 8GB