Elpida EBJ41UF8BDU5-GN-F 4GB vs Micron Technology 16ATF2G64HZ-2G1B1 16GB

总分

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

总分

Micron Technology 16ATF2G64HZ-2G1B1 16GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

差异规格评论

差异

Elpida EBJ41UF8BDU5-GN-F 4GB

需要考虑的原因
Elpida EBJ41UF8BDU5-GN-F 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 36

左右 33% 更低的延时
更快的读取速度，GB/s

14.4 13.9

测试中的平均数值

Micron Technology 16ATF2G64HZ-2G1B1 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-2G1B1 16GB

报告一个错误

更快的写入速度，GB/s

10.1 9.4

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Elpida EBJ41UF8BDU5-GN-F 4GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

24 36
读取速度，GB/s

14.4 13.9
写入速度，GB/s

9.4 10.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2267 2581

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Essencore Limited IM4AGU88N24-FFFHA0 16GB

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Golden Empire CL14-14-14 D4-2400 16GB

Golden Empire CL14-14-14 D4-2400 16GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

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Corsair CMY16GX3M4A2133C8 4GB

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G Skill Intl F4-3466C16-8GTZR 8GB

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Samsung M471B5173DB0-YK0 4GB

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Kingston K1N7HK-ELC 2GB

Kingston K1N7HK-ELC 2GB

GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Golden Empire CL16-16-16 D4-3200 4GB

Golden Empire CL16-16-16 D4-3200 4GB

Crucial Technology CT51264BF160BJ.M8F 4GB

Crucial Technology CT51264BF160BJ.M8F 4GB

Kingston ASU21D4U5S8MB-8 8GB

Kingston ASU21D4U5S8MB-8 8GB

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G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F4-4800C20-16GTZR 16GB

G Skill Intl F4-4800C20-16GTZR 16GB