Elpida EBJ41UF8BDU5-GN-F 4GB vs Samsung M471A5244CB0-CTD 4GB

总分

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

总分

Samsung M471A5244CB0-CTD 4GB

Samsung M471A5244CB0-CTD 4GB

差异规格评论

差异

Elpida EBJ41UF8BDU5-GN-F 4GB

需要考虑的原因
Elpida EBJ41UF8BDU5-GN-F 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 39

左右 38% 更低的延时

Samsung M471A5244CB0-CTD 4GB

需要考虑的原因
Samsung M471A5244CB0-CTD 4GB

报告一个错误

更快的读取速度，GB/s

15.5 14.4

测试中的平均数值
更快的写入速度，GB/s

11.5 9.4

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Elpida EBJ41UF8BDU5-GN-F 4GB

Samsung M471A5244CB0-CTD 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

24 39
读取速度，GB/s

14.4 15.5
写入速度，GB/s

9.4 11.5
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2267 2264

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Wilk Elektronik S.A. IR2400D464L15S/4G 4GB

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Kingston 9905403-515.A00LF 8GB

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Gloway International (HK) STK4U2400D17161C 16GB

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Crucial Technology CT25664BA160B.C16F 2GB

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Micron Technology TEAMGROUP-UD4-3000 16GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Crucial Technology CT16G4DFRA266.C16FP 16GB

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Panram International Corporation W4N2666PS-8G 8GB

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Team Group Inc. UD5-6400 16GB

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Kingston 9965525-018.A00LF 4GB

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Samsung M378A2K43BB1-CPB 16GB

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

Patriot Memory (PDP Systems) PSD432G32002 32GB

Patriot Memory (PDP Systems) PSD432G32002 32GB

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Crucial Technology BL8G30C15U4B.8FE 8GB

Crucial Technology BL8G30C15U4B.8FE 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Corsair CMK64GX4M8A2666C16 8GB

Corsair CMK64GX4M8A2666C16 8GB