Elpida EBJ41UF8BDU5-GN-F 4GB vs Samsung V-GeN D4S16GL32A8TS 16GB

总分

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

总分

Samsung V-GeN D4S16GL32A8TS 16GB

Samsung V-GeN D4S16GL32A8TS 16GB

差异规格评论

差异

Elpida EBJ41UF8BDU5-GN-F 4GB

需要考虑的原因
Elpida EBJ41UF8BDU5-GN-F 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 57

左右 58% 更低的延时

Samsung V-GeN D4S16GL32A8TS 16GB

需要考虑的原因
Samsung V-GeN D4S16GL32A8TS 16GB

报告一个错误

更快的读取速度，GB/s

19.1 14.4

测试中的平均数值
更快的写入速度，GB/s

10.1 9.4

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Elpida EBJ41UF8BDU5-GN-F 4GB

Samsung V-GeN D4S16GL32A8TS 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

24 57
读取速度，GB/s

14.4 19.1
写入速度，GB/s

9.4 10.1
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2267 2377

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KF552C40-16 16GB

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G Skill Intl F4-2400C15-8GNT 8GB

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Kingston XRGM6C-MIE 16GB

Kingston XRGM6C-MIE 16GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Hewlett-Packard 7EH68AA# 16GB

Hewlett-Packard 7EH68AA# 16GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

SK Hynix GKE160UD102408-2400 16GB

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Samsung M393B1K70CH0-CH9 8GB

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Samsung M393A2K40CB2-CTD 16GB

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