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Elpida EBJ41UF8BDW0-GN-F 4GB
Nanya Technology NT4GC64B8HG0NF-DI 4GB

Elpida EBJ41UF8BDW0-GN-F 4GB vs Nanya Technology NT4GC64B8HG0NF-DI 4GB

总分
star star star star star
Elpida EBJ41UF8BDW0-GN-F 4GB

Elpida EBJ41UF8BDW0-GN-F 4GB

总分
star star star star star
Nanya Technology NT4GC64B8HG0NF-DI 4GB

Nanya Technology NT4GC64B8HG0NF-DI 4GB

差异 规格 评论

差异

Elpida EBJ41UF8BDW0-GN-F 4GB 需要考虑的原因
Elpida EBJ41UF8BDW0-GN-F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 43
    左右 12% 更低的延时
  • 更快的读取速度，GB/s
    14.4 left arrow 13.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.5 left arrow 9.1
    测试中的平均数值
Nanya Technology NT4GC64B8HG0NF-DI 4GB 需要考虑的原因
Nanya Technology NT4GC64B8HG0NF-DI 4GB
报告一个错误

规格

完整的技术规格清单
Elpida EBJ41UF8BDW0-GN-F 4GB
Nanya Technology NT4GC64B8HG0NF-DI 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    38 left arrow 43
  • 读取速度，GB/s
    14.4 left arrow 13.4
  • 写入速度，GB/s
    9.5 left arrow 9.1
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    2361 left arrow 2204

Elpida EBJ41UF8BDW0-GN-F 4GB RAM的比较

Kingston HP698650-154-MCN 4GB
Team Group Inc. TEAMGROUP-D4-3866 4GB

Nanya Technology NT4GC64B8HG0NF-DI 4GB RAM的比较

SK Hynix HMT451S6AFR8A-PB 4GB
Samsung M378B5773SB0-CK0 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Elpida EBJ41UF8BDW0-GN-F 4GB
Elpida EBJ41UF8BDW0-GN-F 4GB
Nanya Technology NT4GC64B8HG0NF-DI 4GB
Nanya Technology NT4GC64B8HG0NF-DI 4GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
Samsung M471A2G43AB2-CWE 16GB
Samsung M471A2G43AB2-CWE 16GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Kingston 9965604-027.D00G 8GB
Kingston 9965604-027.D00G 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
SK Hynix HMA451U7MFR8N-TF 4GB
SK Hynix HMA451U7MFR8N-TF 4GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Micron Technology 36ASF4G72PZ-2G6H1 32GB
Micron Technology 36ASF4G72PZ-2G6H1 32GB
内存RAM
Samsung M393B1K70CH0-YH9 8GB
Samsung M393B1K70CH0-YH9 8GB
Samsung M393A2K40BB2-CTD 16GB
Samsung M393A2K40BB2-CTD 16GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
ISD Technology Limited IM44GU48A30-GIIHM 4GB
ISD Technology Limited IM44GU48A30-GIIHM 4GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3000C16-16GTZR 16GB
G Skill Intl F4-3000C16-16GTZR 16GB
内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BL8G32C16U4B.M8FE1 8GB
Crucial Technology BL8G32C16U4B.M8FE1 8GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Kingston MSI24D4U7S8MB-8 8GB
Kingston MSI24D4U7S8MB-8 8GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Micron Technology 8ATF1G64AZ-2G3B1 8GB
Micron Technology 8ATF1G64AZ-2G3B1 8GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Ramaxel Technology RMUA5090KE68H9F2133 4GB
Ramaxel Technology RMUA5090KE68H9F2133 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMD32GX4M4A2400C14 8GB
Corsair CMD32GX4M4A2400C14 8GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Crucial Technology CT8G4DFS8266.M8FD 8GB
Crucial Technology CT8G4DFS8266.M8FD 8GB
内存RAM