Elpida EBJ81UG8BBU0-GN-F 8GB vs Crucial Technology CT8G4DFD824A.C16FADP 8GB

总分

Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

总分

Crucial Technology CT8G4DFD824A.C16FADP 8GB

Crucial Technology CT8G4DFD824A.C16FADP 8GB

差异规格评论

差异

Elpida EBJ81UG8BBU0-GN-F 8GB

需要考虑的原因
Elpida EBJ81UG8BBU0-GN-F 8GB

报告一个错误

Crucial Technology CT8G4DFD824A.C16FADP 8GB

需要考虑的原因
Crucial Technology CT8G4DFD824A.C16FADP 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 44

左右 -83% 更低的延时
更快的读取速度，GB/s

17.1 13.2

测试中的平均数值
更快的写入速度，GB/s

13.6 9.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Elpida EBJ81UG8BBU0-GN-F 8GB

Crucial Technology CT8G4DFD824A.C16FADP 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 24
读取速度，GB/s

13.2 17.1
写入速度，GB/s

9.1 13.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2302 3079

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-4000C19-16GTZR 16GB

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Crucial Technology CT51264BD1339.M16F 4GB

Corsair CMU32GX4M4C3000C16 8GB

Corsair CMU32GX4M4C3000C16 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Corsair CMV32GX4M1A2666C18 32GB

Corsair CMV32GX4M1A2666C18 32GB

Kingston 9905471-076.A00LF 8GB

Kingston 9905471-076.A00LF 8GB

Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N

Nanya Technology M2F4G64CB8HG5N-CG 4GB

Nanya Technology M2F4G64CB8HG5N-CG 4GB

G Skill Intl F4-2400C15-16GVR 16GB

G Skill Intl F4-2400C15-16GVR 16GB