Nanya Technology M2Y51264TU88B0B-3C 512MB vs G Skill Intl F4-4000C19-16GTZR 16GB

总分

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

总分

G Skill Intl F4-4000C19-16GTZR 16GB

G Skill Intl F4-4000C19-16GTZR 16GB

差异规格评论

差异

Nanya Technology M2Y51264TU88B0B-3C 512MB

需要考虑的原因
Nanya Technology M2Y51264TU88B0B-3C 512MB

报告一个错误

更快的读取速度，GB/s

3 18.8

测试中的平均数值

G Skill Intl F4-4000C19-16GTZR 16GB

需要考虑的原因
G Skill Intl F4-4000C19-16GTZR 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 54

左右 -108% 更低的延时
更快的写入速度，GB/s

17.9 1,308.1

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2Y51264TU88B0B-3C 512MB

G Skill Intl F4-4000C19-16GTZR 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

54 26
读取速度，GB/s

3,573.5 18.8
写入速度，GB/s

1,308.1 17.9
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

371 4053

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 78T2863QZS-CF7 1GB

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Avant Technology F641GU67F9333G 8GB

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Samsung M3 78T5663RZ3-CE6 2GB

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Crucial Technology CT8G4DFD824A.C16FDD2 8GB

Crucial Technology CT8G4DFD824A.C16FDD2 8GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Kingston 9905734-063.A00G 32GB

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Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Crucial Technology BLM16G40C18U4BL.M8FB 16GB

Crucial Technology BLM16G40C18U4BL.M8FB 16GB

Samsung M471B5173BH0-CK0 4GB

Samsung M471B5173BH0-CK0 4GB

Micron Technology 72ASS8G72LZ-2G6D2 64GB

Micron Technology 72ASS8G72LZ-2G6D2 64GB