Samsung M471B5173BH0-CK0 4GB vs Micron Technology 72ASS8G72LZ-2G6D2 64GB

总分

Samsung M471B5173BH0-CK0 4GB

Samsung M471B5173BH0-CK0 4GB

总分

Micron Technology 72ASS8G72LZ-2G6D2 64GB

Micron Technology 72ASS8G72LZ-2G6D2 64GB

差异规格评论

差异

Samsung M471B5173BH0-CK0 4GB

需要考虑的原因
Samsung M471B5173BH0-CK0 4GB

报告一个错误

更快的读取速度，GB/s

12 8.7

测试中的平均数值
更快的写入速度，GB/s

7.2 7.0

测试中的平均数值

Micron Technology 72ASS8G72LZ-2G6D2 64GB

需要考虑的原因
Micron Technology 72ASS8G72LZ-2G6D2 64GB

报告一个错误

低于PassMark测试中的延时，ns

38 42

左右 -11% 更低的延时
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173BH0-CK0 4GB

Micron Technology 72ASS8G72LZ-2G6D2 64GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 38
读取速度，GB/s

12.0 8.7
写入速度，GB/s

7.2 7.0
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1933 1999

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BL8G32C16U4BL.8FE 8GB

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SK Hynix HMA851U6JJR6N-VK 4GB

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Samsung M471B5173QH0-YK0 4GB

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Corsair CMW16GX4M2Z4000C18 8GB

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Kingston KHX1600C9D3/4GX 4GB

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Corsair CMK32GX4M2Z4000C18 16GB

Corsair CMK32GX4M2Z4000C18 16GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

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Kingston 9905624-051.A00G 8GB

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AMD R5316G1609U2K 8GB

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G Skill Intl F4-3600C17-16GTZKW 16GB